Semiconductor laser
文献类型：专利
| 作者 | WADA HIROSHI; KAWAHARA MASATO; OGAWA HIROSHI; HORIKAWA HIDEAKI |
| 发表日期 | 1987-11-26 |
| 专利号 | JP1987272580A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser in which a plurality of laser elements are integrated in high density to operate with high output by providing first laser elements each having an active layer in grooves and second laser elements each having substantially the same oscillation wavelength as that of the first element with an active layer between the first elements out of the grooves. CONSTITUTION:A semiconductor laser element having a plurality of laser elements has first laser elements each having an active layer 57 in a groove 53, and second laser elements each having an active layer 49 between the first elements out of the grooves 53 and substantially the same oscillation wavelength as the that of the first element. For example, a P-type InP first clad layer 47, a P-type GaIaAsP first active layer 49 and N-type InP second clad layer 51 are provided on a base 45 composed of a P-type InP substrate 41 and a P-type InP buffer layer 43, and a plurality of grooves 53 are formed. A P-type InP third clad layer 55 and a P-type GaInAsP second active layer 57 are formed in the grooves 53, and an N-type InP fourth clad layer 59 and an N-type GaInAsP cap layer 61 are formed on the second layer 57 and 5 |
| 公开日期 | 1987-11-26 |
| 申请日期 | 1986-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74473]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WADA HIROSHI,KAWAHARA MASATO,OGAWA HIROSHI,et al. Semiconductor laser. JP1987272580A. 1987-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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