Semiconductor laser device
文献类型：专利
| 作者 | SADAMASA TETSUO; MORINAGA MOTOYASU; KUSHIBE MITSUHIRO; ONOMURA MASAAKI |
| 发表日期 | 1992-10-23 |
| 专利号 | JP1992299882A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve heat dissipation from an element surface, and enhance element characteristics and reliability, by forming constant undulations on the side wall part or the slant part of a second stripe mesa, and providing an electrode formed on the undulations with unevenness. CONSTITUTION:On an N-type InP substrate 11, the following are formed in order; an N-type InP clad layer 12, an N-type GaAsP active layer 13, and an N-type InGaAsP optical guide layer 14. After a diffraction grating having a specified pitch is formed on a wafer wherein the above layers are subjected to crystal growth, a first stripe mesa is formed by performing mesa etching in a stripe type. A P-type InP clad layer 15 is formed on the substrate 11 and the first stripe mesa. A second stripe mesa is formed so as to reflect the form of the first stripe mesa. A slant surface having inclination to the surface of an active layer and undulations is formed on the second stripe mesa. Said undulations are reflected on a P-type InGaAs contact layer 16. Further, an N-type ohmic electrode 18 is formed on the contact layer 16. |
| 公开日期 | 1992-10-23 |
| 申请日期 | 1991-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74474]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SADAMASA TETSUO,MORINAGA MOTOYASU,KUSHIBE MITSUHIRO,et al. Semiconductor laser device. JP1992299882A. 1992-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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