Semiconductor light-emitting element
文献类型：专利
| 作者 | UEHARA KUNIO |
| 发表日期 | 1988-05-26 |
| 专利号 | JP1988122292A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To obtain a semiconductor light-emitting element without characteristic deterioration due to stress strain of an insulating film, by monotonously decreasing a thickness of an insulating film's terminal; part over the range of a specific value or less toward the insulating film's terminal part. CONSTITUTION:Composition of this element is as follows: an insulating film 20 is formed on a surface of a contact layer 14 which is on the outermost side of an epitaxial growth layer containing an active layer 12, and a thickness of this film's terminal part 21 of (t) in width is monotonously decreased over the range of 1 to 6 times of an insulating film thickness (d) toward the terminal part. In the case of t/d=1, that is, - or + =45 deg., shearing stress which the crystal receives just under the insulating film's terminal part is about 10.7% smaller at the 0.1 mum deep position and is about 75.6% smaller at the 0.5 mum deep position, respectively, than that in the case of theta=90 deg. The shearing stress in the case of t/d:5=7, that is, theta=10 deg. is about 0% smaller at the 0.1 mum deep position and is about 9.1 % smaller at the 0.5mum deep position, respectively, than that in the case of theta=90 deg. |
| 公开日期 | 1988-05-26 |
| 申请日期 | 1986-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74496]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UEHARA KUNIO. Semiconductor light-emitting element. JP1988122292A. 1988-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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