半導体レ-ザ装置
文献类型：专利
| 作者 | 魚見 和久; 茅根 直樹; 梶村 俊; 福沢 董; 佐々木 義光 |
| 发表日期 | 1995-10-18 |
| 专利号 | JP1995097687B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having low aberration of laser light, low noise and high reliability, by providing at least a pair of layered dielectric films each of which has a specific refractive index, on each of two reflecting surfaces constituting an optical resonator. CONSTITUTION:An N-type Ga0.55Al0.45As clad layer 4 and a P-type GaAs cap layer 3 are provided on an N-type GaAs substrate 7, sequentially in that order, and a P-side electrode 8 and an N-side electrode 9 are formed. SiO2 is then provided on both the reflecting surfaces as first dielectric films. Amorphous Si films are formed thereon as second dielectric films. A quantum well layer is formed in stripes for transverse mode control in which five layers of Ga0.9 Al0.1As 5b and six layers of Ga0.7Al0.3As are layered alternately. The end faces on which the dielectric films are adhered have a reflectivity of about 40-85% as determined by a material used, producing conditions and thicknesses of the films. When the reflectivity is 50% or more, it has an effect of decreasing noise. According to this method, a semiconductor laser having low aberration of laser light, low noise and high reliability can be obtained. |
| 公开日期 | 1995-10-18 |
| 申请日期 | 1985-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74501]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 魚見 和久,茅根 直樹,梶村 俊,等. 半導体レ-ザ装置. JP1995097687B2. 1995-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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