Manufacture of semiconductor laser
文献类型：专利
| 作者 | HIRAYAMA FUKUICHI; YOKOZAWA MASAMI |
| 发表日期 | 1989-08-08 |
| 专利号 | JP1989196891A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the dispersion of the spreading angle of laser beams by previously cleaving a GaAs substrate and arranging a semiconductor element, using the cleavage plane as a reference line. CONSTITUTION:The end of a P-type GaAs (the surface is represented by a face (100)) single crystal substrate 1 is cloven mechanically, thus forming a reference line 2. Patterning is conducted along the reference line 2 in the direction of cleavage, etching, multilayer epitaxial growth and electrode formation are executed, and a second cleavage plane 3 is obtained crossed at right angles with the reference line 2 acquired by a cleavage plane. Accordingly, the dispersion of the spreading angle of laser beams is reduced. |
| 公开日期 | 1989-08-08 |
| 申请日期 | 1988-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74522]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIRAYAMA FUKUICHI,YOKOZAWA MASAMI. Manufacture of semiconductor laser. JP1989196891A. 1989-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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