Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | TANAKA TOSHIAKI; ONO YUICHI; KONO TOSHIHIRO; KAJIMURA TAKASHI |
| 发表日期 | 1990-04-23 |
| 专利号 | JP1990109387A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To make it possible to obtain the intended characteristics of a semicon ductor laser stably in a crystal growing by inserting an etching stopping layer at the intermediate upper part of an active layer so that the desired film thick ness remains, and performing the control of the thickness of a light guide layer with excellent reproducibility. CONSTITUTION:On an n-type semiconductor substrate 1, the following layers are sequentially laminated: an n-type buffer layer 2; an n-type clad layer 3; an undoped active layer 4; a p-type clad layer 5; an etching stopping layer 7 having a thickness of 5-20 nm as an AlxGa1-xAs (0-5X10cm and a film thickness of 0.05-0.2mum which holds the layer 7; a p-type clad layer 8; and a p-type gap layer 9. A mask is used, and etching is performed down to the stopping layer 7. Heat treatment is performed, Disorganization of the composition is performed between the stopping layer 7 and the light guide alayer. An n-type block layer 10, a p-type gap layer 11, and then electrodes 12 and 13 are evaporated. Then, the device is cut into elements. |
| 公开日期 | 1990-04-23 |
| 申请日期 | 1988-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74532]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,ONO YUICHI,KONO TOSHIHIRO,et al. Semiconductor laser element and manufacture thereof. JP1990109387A. 1990-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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