Manufacture of semiconductor laser
文献类型：专利
| 作者 | OGAWA MASAMICHI; ISHIBASHI AKIRA; OHATA TOYOJI |
| 发表日期 | 1991-09-27 |
| 专利号 | JP1991220786A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To simplify the manufacturing process by forming a stripe-shaped semiconductor layer whose one side surface is a growing surface and other side surface is a surface that is not grown on a semiconductor substrate, and thereafter epitaxially growing semiconductor layers for forming a laser structure. CONSTITUTION:A semiconductor layer 2 is formed on a semiconductor substrate One side surface of the layer 2 is a growing surface, and the other side surface is a surface that is not grown. Then, semiconductor layers 3-6 for forming a laser structure are epitaxially grown. At this time, the surface that is not grown includes the surface wherein the semiconductor layers 3-6 are grown but the growing thicknesses are very small in addition to the surface where the growth does not occur at all. Thus, the manufacturing process is simplified, and the occurrence of damages in the epitaxially grown semiconductor layers is prevented. |
| 公开日期 | 1991-09-27 |
| 申请日期 | 1990-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74552]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | OGAWA MASAMICHI,ISHIBASHI AKIRA,OHATA TOYOJI. Manufacture of semiconductor laser. JP1991220786A. 1991-09-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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