Semiconductor laser
文献类型：专利
| 作者 | SATO FUMIHIKO; IMANAKA KOICHI |
| 发表日期 | 1988-09-13 |
| 专利号 | JP1988220588A |
| 著作权人 | OMRON TATEISI ELECTRONICS CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To simplify a production process and to achieve the high yield rate by a method wherein a low part on both sides of a mesa-shaped active region is buried with a heat-resisting and high-resistance resin whose coefficient of thermal expansion is very close to that of the active region. CONSTITUTION:A heat-resisting and high-resistance resin is placed at a low part on both sides of a mesa part in such a way that its height is almost equal to the surface of the mesa part; an electrode is formed on the surface of the mesa part and on the surface of the heat-resisting and high-resistance resin. This heat-resisting and high-resistance resin is transformed into a low-thermal- expansion resin whose coefficient of thermal expansion is almost the same as that of a semiconductor material constituting a semiconductor laser. Accrodinglly, the crystal growth can be executed by only one crystal growth process of a double heterojunction. By this setup, a production process is simplified; in addition, because the coefficient of thermal expansion of the heat- resisting and high-resistance resin is close to that of the semiconductor, the breakdown strength of the junction at an active region is not deteriorated, it is possible to achieve the high yield rate. |
| 公开日期 | 1988-09-13 |
| 申请日期 | 1987-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74556]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRONICS CO |
| 推荐引用方式 GB/T 7714 | SATO FUMIHIKO,IMANAKA KOICHI. Semiconductor laser. JP1988220588A. 1988-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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