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文献类型：专利
| 作者 | SAKUMA ISAMU |
| 发表日期 | 1986-11-21 |
| 专利号 | JP1986054279B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To facilitate the oscillation of a fundamental mode and to turn out a high power by performing a mesa etching to the depth penetrating an active layer of a four-layer structure section having a light guiding layer and a carrier confinement layer. CONSTITUTION:A positive current is applied to a P-type electrode, a negative current is applied to an N-type electrode, a carrier is injected into an active layer 14 and a luminescence is obtained by recombination. The injected carrier is confined by the semiconductor layers 13 and 15 located in the vicinity of the active layer. When a gain surpasses a loss with a sufficient application of current, a laser beam is generated from the active layer 14. This beam oozes out to a beam guide layer 13 and is guided by a beam confinement layer 12 having a low refractive index and a beam- carrier confinement layer 15. As the thickness of a central part 20 of a guide layer 13 differs from that of its outside, the lateral refractive index distribution becomes larger as compared with the central part. In other words, it means that a beam waveguide mechanism is fabricated in a luminous region and the fundamental mode confined within said region is oscillated to the lateral direction, too. The fact that the lateral direction of the active layer has a mesa etching in a striped form shows that the diffusion of the carrier is limited within the mesa-type protruded section only. |
| 公开日期 | 1986-11-21 |
| 申请日期 | 1979-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74558]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU. -. JP1986054279B2. 1986-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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