Semiconductor laser and production method thereof
文献类型：专利
| 作者 | NAGAI, YUTAKA, C/O MITSUBISHI DENKI K.K. |
| 发表日期 | 1995-02-15 |
| 专利号 | EP0622879A3 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and production method thereof |
| 英文摘要 | A semiconductor laser device includes: a first conductivity type semiconductor substrate (1); a first conductivity type lower cladding layer (2) on the semiconductor substrate; an active layer (3) on the upper lower layer; a second conductivity type first upper cladding (4) layer on the active layer; a second conductivity type AlzGa1-zAs light reflecting layer (5) on the first upper cladding layer, where z is equal to or larger than 0.6; a second conductivity type second upper cladding (17) layer comprising AlyGa1-yAs including a stripe shaped ridge region portion and thin film layer portions on the light reflecting layer; and first conductivity type current blocking layers disposed on the said both side thin film portions of the second upper cladding layer so as to bury the ridge region portion. Therefore, the surface defect density can be reduced from 10⁶/cm² in the prior art to 10⁴/cm², and thus the surface morphology is improved to a great extent and a high reliability semiconductor laser device having preferable device characteristics is obtained. When the total thickness of the first upper cladding layer, the light reflecting layer, the thin film layer portion of second upper cladding layer is equal to or lower than 0.3µm, there arises no idle current which otherwise arises due to the injected current being broadened in the transverse direction under the current blocking layers, whereby a preferable device characteristics is obtained. |
| 公开日期 | 1995-02-15 |
| 申请日期 | 1994-02-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74562]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | NAGAI, YUTAKA, C/O MITSUBISHI DENKI K.K.. Semiconductor laser and production method thereof. EP0622879A3. 1995-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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