Manufacture of semiconductor laser element
文献类型：专利
| 作者 | UEDA OSAMU |
| 发表日期 | 1984-11-27 |
| 专利号 | JP1984208885A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To flatten the surface whereon an electrode layer is to be formed at the time of forming said layer and unnecessitate the process of polishing by a method wherein epitaxial multilayers including an InGaAsP active layer are formed on a p type InP substrate, and an n type InP layer on an n type InP clad layer and a p type InP layer is made thick. CONSTITUTION:A p type InGaAsP contact layer 2, a p type InP clad layer 3, the InGaAsP active layer 4, and the n type InP clad layer 5 are successively formed on the p type InP substrate 1 by epitaxial growing method. A mesa stripe part 7 is formed by selective etching with a stripe mask layer 6 as a mask. The n type InP layer and the p type InP layer 9 are successively formed by epitaxial growing method, and then the mask layer 6 is removed. Next, the n type InP layer 10 thick relatively is formed on the exposed clad layer 5 and the InP layer 9 by epitaxial growing method so that the surface of this layer becomes almost flat. Thereafter, only the substrate 1 is removed, and an n electrode layer is formed on the n type InP layer 11, and a p-electrode layer on the p type InGaAsP contact layer 2. |
| 公开日期 | 1984-11-27 |
| 申请日期 | 1983-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74564]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UEDA OSAMU. Manufacture of semiconductor laser element. JP1984208885A. 1984-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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