Semiconductor laser
文献类型：专利
| 作者 | WATANABE KAZUAKI |
| 发表日期 | 1992-10-29 |
| 专利号 | JP1992307780A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive a reduction in the threshold value of a semiconductor laser and an increase in the efficiency of the laser by a method wherein the laser is formed of a first clad layer, a first optical waveguide layer, an active layer, a second optical waveguide layer and a second clad layer and the active layer is formed into a single quantum well structure wherein the number of a well layer is CONSTITUTION:An N-type buffer layer 12, an N-type lower clad layer 13, an N-type lower optical waveguide layer 14, a quantum well active layer 15, a P-type upper optical waveguide layer 16, a p-type upper clad layer 17 and a p-type contact layer 18 are laminated in order on an N-type GaAs substrate 1 The layer 18 and the layer 17 are processed into a rib form to form an optical waveguide and the optical waveguide is filled with ZnSe which is a II-VI compound semiconductor. A laser chip has a refractive index waveguide region in the vicinity of each resonator end face and has a gain waveguide region at its center part. The layer 15 is a single quantum well using a non- doped GaAs layer as a well layer. Thereby, a reduction in the threshold value of a semiconductor laser and an increase in the efficiency of the laser can be realized. |
| 公开日期 | 1992-10-29 |
| 申请日期 | 1991-04-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74573]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | WATANABE KAZUAKI. Semiconductor laser. JP1992307780A. 1992-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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