Manufacture of semiconductor light-emitting device
文献类型：专利
| 作者 | SUGANO YOSHIYASU |
| 发表日期 | 1988-12-14 |
| 专利号 | JP1988306687A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To perform a screening in a wafer state by forming the series connection of a semiconductor light emitting element as an electrode pattern on a wafer, and the dividing it into elements. CONSTITUTION:A P type region 8 is formed on a wafer on which an N-type GaAs layer 2, an N-type Ga0.7Al0.3As clad layer 3, a P-type Ga0.95Al0.05As active layer 4, a P-type Ga0.7Al0.3As clad layer 5, an N-type Ga0.7Al0.3As current narrowing layer 6 and a P-type Ga0.7Al0.3As cap layer 7 are sequentially grown on a chromium-doped semi-insulating GaAs substrate 1 to form the layer 6 of a light emitting region of P-type. An opening is formed in a protective insulating film 9 of the upper face of the lower stage of a mesa to deposit AuGe on an N-type electrode 11 in contact with the layer 2, to deposit Au/Zn on a P-type electrode 10 in contact with the layer 7, Au is further deposited on the whole face, and an electrode pattern in which the electrode 10 of one element is connected by an Au-connecting pattern 12 to the electrode 11 of an adjacent element is sequentially formed in the same row. |
| 公开日期 | 1988-12-14 |
| 申请日期 | 1987-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74578]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SUGANO YOSHIYASU. Manufacture of semiconductor light-emitting device. JP1988306687A. 1988-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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