Semiconductor laser device
文献类型：专利
| 作者 | WATANABE HITOSHI |
| 发表日期 | 1992-12-07 |
| 专利号 | JP1992352485A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a quantum well type semiconductor device which enables carriers which are not subjected to tunneling easily between quantum well layers to be implanted uniformly at a plurality of quantum well layers since an effective mass is large or an amount of band discontinuity of quantum well is large. CONSTITUTION:An n-InP upper clad layer 11 and an n-InP lower clad layer 12 which sandwich a quantum well activation layer 1 are provided in vertical direction for it. On the other hand, a p-InP buried layer 4 which sandwiches the quantum well activation layer is provided in horizontal direction for it. Luminous recombination occurs efficiently and laser characteristics are improved. |
| 公开日期 | 1992-12-07 |
| 申请日期 | 1991-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74584]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | WATANABE HITOSHI. Semiconductor laser device. JP1992352485A. 1992-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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