Semiconductor laser
文献类型：专利
| 作者 | NOBUHARA HIROYUKI |
| 发表日期 | 1991-03-04 |
| 专利号 | JP1991049280A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable simplified optical coupling which has a higher coupling efficiency with optical fiber and larger coupling tolerance by providing a laser layer structure which includes a laser active layer whose band gap is smaller than a substrate on the surface of said substrate and installing a lens which converges input light to the active layer to the back of said substrate. CONSTITUTION:The following steps are made to grow consecutively a lower part clad layer 2, a laser active layer whose band gap is greater than a semiconductor substrate 1, and an upper part clad layer 6 on the surface of the semiconductor substrate 1, thereby forming mesa stripes which comprise each layer. Then, after both sides are filled with a current constriction embedded layer 3 and the substrate 1 is flattened, an upper part contact layer 4 is adapted to grow so that a cylinder-shaped lens 7 may be formed on the back of the substrate This construction prevents incidence light from being absorbed on the substrate Moreover, an optical signal arrives at the layer 5 from the back of the substrate 1 vertically so that the light may be reflected on the end face of a laser oscillator, which prevents the light from shuttling. It is, therefore, possible to produce simplified optical coupling which has a higher coupling efficiency with optical fiber and a larger coupling tolerance as well. |
| 公开日期 | 1991-03-04 |
| 申请日期 | 1989-07-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74594]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NOBUHARA HIROYUKI. Semiconductor laser. JP1991049280A. 1991-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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