Quantum cascade laser
文献类型：专利
| 作者 | HASHIMOTO, JUN-ICHI |
| 发表日期 | 2016-05-31 |
| 专利号 | US9356429 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum cascade laser |
| 英文摘要 | A quantum cascade laser includes a substrate having first, second, third, and fourth regions; a stacked semiconductor layer including n-type lower and upper conductive layers, a core layer having a mesa structure, and a cladding layer; first and second buried layers disposed on side surfaces of the core layer and above the substrate; a first electrode disposed on the upper conductive layer above the first region; and a second electrode disposed on the lower conductive layer above the fourth region. The core layer is disposed on the lower conductive layer above the second region. The upper conductive layer is disposed on the first buried layer and the core layer. The cladding layer is disposed on the upper conductive layer above the second region. The substrate and the cladding layer are formed of an undoped or semi-insulating semiconductor. The first and second buried layers are formed of a semi-insulating semiconductor. |
| 公开日期 | 2016-05-31 |
| 申请日期 | 2014-02-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74600]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES |
| 推荐引用方式 GB/T 7714 | HASHIMOTO, JUN-ICHI. Quantum cascade laser. US9356429. 2016-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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