Semiconductor laser device
文献类型：专利
| 作者 | KAGAWA HITOSHI; YAGI TETSUYA |
| 发表日期 | 1992-07-10 |
| 专利号 | JP1992192487A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device whose threshold current is small, whose efficiency is high and whose life is long by a method wherein the resistivity in a layer part near an active layer of a second clad layer is made large as compared with the resistivity of a layer part which is distant from the active layer. CONSTITUTION:The resistivity of a first-layer part 61 close to an active layer 4 of a second clad layer 5 is made higher than the resistivity rho2 of a second- layer part 62 which is distant from the active layer 4. That is to say, the first- layer part 61 and the second-layer part 62 in the second clad layer 5 are formed so as to become rho1>rho2. In this case, a leakage current component Io in the total electric current It which has been injected through a path which has been limited to a width W at the bottom part of a ridge 51 is influenced especially by the resistivity rho1 and by the thickness d of the first-layer part 61 in the second clad layer 5. Consequently, the leakage current component Io can be suppressed to be small. Thereby, it is possible to obtain a semiconductor laser element which suppresses an increase in an element resistance to be small and whose leakage current component Io is small. |
| 公开日期 | 1992-07-10 |
| 申请日期 | 1990-11-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74602]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | KAGAWA HITOSHI,YAGI TETSUYA. Semiconductor laser device. JP1992192487A. 1992-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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