Semiconductor optical device
文献类型：专利
| 作者 | HASHIMOTO, JUN-ICHI |
| 发表日期 | 2011-06-07 |
| 专利号 | US7957442 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical device |
| 英文摘要 | An edge-emitting semiconductor optical device comprises a first cladding layer, an active layer, and a second cladding layer. The first cladding layer is provided on a semiconductor substrate. The active layer is provided on the first cladding layer. The semiconductor substrate has a higher band gap than that of the active layer. The first cladding layer includes a first light-absorbing layer and a first light-transmitting layer. The first light-absorbing layer has a lower band gap than that of the active layer, and the first light-transmitting layer has a higher band gap than that of the active layer. The second cladding layer is provided on the active layer. |
| 公开日期 | 2011-06-07 |
| 申请日期 | 2009-07-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74604]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | HASHIMOTO, JUN-ICHI. Semiconductor optical device. US7957442. 2011-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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