Manufacture of semiconductor laser
文献类型：专利
| 作者 | SAKIYAMA HAJIME; TANAKA HARUO; MUSHIGAMI MASAHITO |
| 发表日期 | 1990-08-01 |
| 专利号 | JP1990194682A |
| 著作权人 | ROHM CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a forward voltage by a method wherein when a laser is formed using a molecular beam epitaxial device, a growth process is divided into a process for growing a first upper clad layer and a process for growing a second upper clad layer and the impurity in the first clad layer is diffused in the second clad layer. CONSTITUTION:An N-type AlxGa1-xAs (x=0.6) lower clad layer 3, an AlxGa1-xAs (x=0.15) active layer 4, a P-type AlxGa1-xAs (x=0.6) first clad layer 5, an N- type GaAs photo absorption layer 6 and an N-type AlxGa1-xAs (x=0.15) evaporation preventive layer 7 are laminated in this order on an N-type GaAs substrate 2. After that, the substrate 2 is taken out outside, a striped groove 9 is formed in the layers 6 and 5, an As molecular beam is applied on the substrate 2 surface to evaporate such an impurity as an oxide being adhered on the surface and part 6a of the layer 6 and the surface 5a of the layer 5 is exposed. Then, a molecular beam is applied on the substrate 2 to adhere a P-type dopant on the surface 5a and a P-type dopant layer 5b is generated on the layer 5. |
| 公开日期 | 1990-08-01 |
| 申请日期 | 1989-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74610]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO LTD |
| 推荐引用方式 GB/T 7714 | SAKIYAMA HAJIME,TANAKA HARUO,MUSHIGAMI MASAHITO. Manufacture of semiconductor laser. JP1990194682A. 1990-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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