Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | SUGAWARA SATOSHI; TAKIGUCHI HARUHISA; KUDO HIROAKI; SAKANE CHITOSE |
| 发表日期 | 1991-09-24 |
| 专利号 | JP1991217068A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To enable two types of laser light whose deflection direction differs mutually to be applied and obtain a laser element suitable for light source for an optic-related equipment such as a light source for measuring light by providing lamination structures with an active region on the upper surface and side surface of a stripe-shaped ridge structure which is formed on a semiconductor substrate and by providing a buried layer covering them. CONSTITUTION:The title item has a semiconductor substrate 1, a stripe-shaped ridge structure 11 which is formed on the semiconductor substrate 1, a first lamination structure 10a which is provided on the upper surface of the ridge structure 11 and has an active region 4, a second lamination structure 10b which is provided on one side surface of the ridge structure 11 and has an active region, a third lamination structure 10c which is provided on the other side surface of the ridge structure 11 and has an active region, a buried layer 6 covering the first to third lamination structures 10a-10c, a first electrode 8a which is formed on the buried layer 6 and is electrically connected to the second lamination structure 10b, a second electrode 8b which is formed on the buried layer 6 and is electrically connected to the third lamination structure 10c, and a third electrode 8c which is formed on the buried layer 6 and is electrically connected to the third lamination structure 10c. |
| 公开日期 | 1991-09-24 |
| 申请日期 | 1990-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SUGAWARA SATOSHI,TAKIGUCHI HARUHISA,KUDO HIROAKI,et al. Semiconductor laser element and manufacture thereof. JP1991217068A. 1991-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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