Semiconductor laser device
文献类型：专利
| 作者 | OTA YOICHIRO |
| 发表日期 | 1990-08-03 |
| 专利号 | JP1990196488A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a stable, excellent characteristics device with a reduced memory effect and without a remote junction by providing a first undercladding layer that has high impurity concentration and a second undercladding layer that has low impurity concentration. CONSTITUTION:N-type dopant H2Se conspicuously exhibits a phenomenon called a memory effect where adhering gas to a reaction tube, etc., is freed little by little even after gas supply is stopped, and is incorporated into a growing crystal. To prevent this, the n type dopant H2Se gas is supplied in an increased flow rate during the growth of a first undercladding layer 2 while being supplied in a reduced flow rate during the growth of a second undercladding layer 3. Hereby, a undercladding layer composed of the high impurity concentration first undercladding layer 2 and the low impurity concentration second undercladding layer 3. A P-N junction is located at an interface between the active layer 4 and the second undercladding layer 3 or in the active layer 4, and is not formed in the upper cladding layer 5. Thus, desired characteristics can be realized. |
| 公开日期 | 1990-08-03 |
| 申请日期 | 1989-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74616]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTA YOICHIRO. Semiconductor laser device. JP1990196488A. 1990-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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