Semiconductor laser device
文献类型：专利
| 作者 | NOMA JUNJI; HIROSE MASANORI; OTA KAZUNARI |
| 发表日期 | 1991-01-22 |
| 专利号 | JP1991014279A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To keep the characteristics of broad-area structure, reduce light absorption near the end face as compared before, and achieve higher output by forming a conductivity type impurities diffusion region of different conductivity type as compared with a substrate which penetrates from a current blocking layer into a quantum well active layer and the reaches a clad layer. CONSTITUTION:There are an AlGaAs clad layer 2 and a GaAs quantum well active layer 3 of the same conductivity type as that of a substrate 1, an AlGaAs clad layer 4 of the different conductivity type from that of the substrate 1, and a GaAs current blocking layer 5 of the same conductivity type as that of the substrate 1 on the conductivity type GaAs substrate 1, an impurities diffusion region 8 of a different conductivity type from that of the substrate 1 reaching from the GaAs current blocking layer 5 to the AlGaAs clad layer 4 in stripe shape vertical to the end face at areas except those closer to the end face is formed, and the above impurities diffusion region 8 of different conductivity type from that of the substrate 1 penetrating the GaAs current blocking layer 5 and the GaAs quantum well active layer 3, reaching the AlGaAs clad layer 2 is formed near the end face. |
| 公开日期 | 1991-01-22 |
| 申请日期 | 1989-06-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74624]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NOMA JUNJI,HIROSE MASANORI,OTA KAZUNARI. Semiconductor laser device. JP1991014279A. 1991-01-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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