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文献类型：专利
| 作者 | MITO IKUO |
| 发表日期 | 1993-01-22 |
| 专利号 | JP1993005390B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a single axial mode type semiconductor laser adequate to vapor growth and having the characteristics of high performance by forming a groove reaching an optical guide layer to a multilayer film substrate, in which specific optical guide layer, current confinement layer and current block layer are each laminated on a semiconductor substrate, to which a diffraction grating is shaped, and laminating a clad layer, an active layer and a clad layer sequentially. CONSTITUTION:A multilayer film substrate in which a first conductivity type optical guide layer 2 having a refractive index larger than a first conductivity type semiconductor substrate 1, a second conductivity type current confinement layer 3 having a refractive index smaller than the optical guide layer 2, and a first conductivity type current block layer 4 are laminated on the semiconductor substrate 1, to the surface of which a diffraction grating 10 is shaped, is prepared. A groove 20 in depth reaching the optical guide layer 2 is formed to one part of the multilayer film substrate, and a first conductivity type clad layer 5 having a refractive index smaller than the optical guide layer 2, an active layer 6 having a refractive index larger than the optical guide layer 2 and a second conductivity type clad layer 7 having a refractive index smaller than the optical guide layer 2 are laminated, coating the whole surface of said multilayer film substrate including the groove 20. |
| 公开日期 | 1993-01-22 |
| 申请日期 | 1986-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74629]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | MITO IKUO. -. JP1993005390B2. 1993-01-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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