Semiconductor laser device
文献类型：专利
| 作者 | OKAJIMA, MASAKI; NITTA, KOICHI; HATAKOSHI, GENICHI; NISHIKAWA, YUKIE; ITAYA, KAZUHIKO |
| 发表日期 | 1994-01-25 |
| 专利号 | US5282218 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device for radiating a laser beam from a double heterostructure section in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate with a prescribed lattice constant for loading the double heterostructure section, a lattice mismatched active layer with a first lattice constant which is 0.5% to 2.0% larger than the lattice constant of the substrate in the double heterostructure section for radiating the laser beam, a lattice mismatched cladding layer with a second lattice constant which is 0.2% to 2.0% smaller than the lattice constant of the substrate for confining the injected carriers in the active layer, and a cladding layer for confining the injected carriers in the active layer by co-operating with the lattice mismatched cladding layer. |
| 公开日期 | 1994-01-25 |
| 申请日期 | 1992-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74634]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | OKAJIMA, MASAKI,NITTA, KOICHI,HATAKOSHI, GENICHI,et al. Semiconductor laser device. US5282218. 1994-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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