Semiconductor laser device
文献类型：专利
| 作者 | SUGINO TAKASHI; YOSHIKAWA AKIO; HIROSE MASANORI; KUME MASAHIRO; YAMAMOTO ATSUYA; NAKAMURA AKIRA |
| 发表日期 | 1989-08-08 |
| 专利号 | JP1989196887A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a mesa striped type laser, deterioration on the side face of an active layer of which is inhibited, by forming double hetero-junction structure to a striped shape and making the width of the active layer wider than that of clad layers on both sides of the active layer. CONSTITUTION:An N-AlyGa1-yAs clad layer 2, a non-doped AlxGa1-xAs active layer 3, a P-AlyGa1-yAs clad layer 4 and a P-GaAs contact layer 5 are grown continuously onto an N-GaAs substrate Multilayer crystals are etched to a striped shape by a sulfuric acid group etchant. The width of the active layer 3 is formed in size wider than that of the clad layers 2, 4 on both sides of the active layer 3. Si3N4 6 is attached to etched sections, and a P side ohmic electrode metal is evaporated. Accordingly, a mesa striped type laser, deterioration on the side face of the active layer 3 of which is inhibited, is acquired. |
| 公开日期 | 1989-08-08 |
| 申请日期 | 1988-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74650]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SUGINO TAKASHI,YOSHIKAWA AKIO,HIROSE MASANORI,et al. Semiconductor laser device. JP1989196887A. 1989-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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