Semiconductor laser
文献类型：专利
| 作者 | WATANABE AKIRA; FURUKAWA RYOZO; SHINOZAKI KEISUKE |
| 发表日期 | 1988-12-21 |
| 专利号 | JP1988312690A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a high output and allow a semiconductor laser to be operated by a low threshold current as well by providing optical waveguide layers at both end part regions of a resonator respectively so that the above layers may come into contact with active layers of the resonator in the case of its laser equipped with the resonator having a doublehetero junction structure composed of a lower side clad layer, an active layer, and an upper side clad layer. CONSTITUTION:A center part of a resonator has a double-hetero junction structure which is composed of ordinary three layers; a lower side clad layer 35, an active layer 39, and an upper side clad layer 41 and both end part regions of the resonator have the double-hetero junction structures which are composed of the lower side clad layer 35, an optical waveguide layer 37, the active layer 39, and the upper side clad layer 41 and then both end part regions turn to a so-called LOC structures where the optical waveguide layer 37 comes into contact with the active layer 39. Accordingly, the center part of the resonator permits this semiconductor laser not only to oscillate by a low threshold current but also to have the LOC structures at its end part regions. As a result, its feature serves the purpose of improving a critical oscillation output value reaching a COD (Catastrophic Optical Damage) and a high output is obtained. |
| 公开日期 | 1988-12-21 |
| 申请日期 | 1987-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74652]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WATANABE AKIRA,FURUKAWA RYOZO,SHINOZAKI KEISUKE. Semiconductor laser. JP1988312690A. 1988-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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