Semiconductor laser element
文献类型：专利
| 作者 | OOTSUKA NAOTAKA; TERAOKA YOSHICHIKA |
| 发表日期 | 1985-08-03 |
| 专利号 | JP1985147189A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To set output characteristics to a high value, and to apply a semiconduction laser element as a signal light source, etc. for an apparatus requiring a high output by optimizing the thickness of a clad layer and an active layer. CONSTITUTION:A current stopping layer 2 consisting of N-GaAs is deposited on a P-GaAs substrate 1, and a V-shaped striped groove reaching to the GaAs substrate 1 from the surface of the layer 2 is processed through etching, thus opening a current path. Striped structure in which currents flow only through a section from which the current stopping layer 2 is removed by the striped groove is constituted. A clad layer 3 composed of P-GaAlAs, an active layer 4 consisting of P (or N and non-doped) GaAlAs a clad layer 5 composed of N-GaAlAs and a cap player 6 consisting of N-GaAs are laminated on the layer 2 through an epitaxial growth method in succession, thus forming multilayer structure for laser oscillation. Thickness in a flat region except the striped groove of the P type clad layer 3 is set to 0.35mum from 0.05mum, preferably, 0.25mum from 0.10mum, and the thickness of the active layer 4 is set to 0.15mum from 0.03mum, preferably, 0.10mum or less. |
| 公开日期 | 1985-08-03 |
| 申请日期 | 1984-01-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74654]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | OOTSUKA NAOTAKA,TERAOKA YOSHICHIKA. Semiconductor laser element. JP1985147189A. 1985-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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