Semiconductor laser device
文献类型：专利
| 作者 | ANAYAMA CHIKASHI |
| 发表日期 | 1992-08-14 |
| 专利号 | JP1992225586A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a high output semiconductor laser capable of reducing the concentration of light to an end face section, minimizing optical absorption at said end face section, and preventing the generation of COD which dispenser with mesa etching up to an active layer. CONSTITUTION:In a semiconductor laser device where an active layer 14, clad layers 12 and 16 which clamp the aforesaid active layer 14 top and bottom are formed on a semiconductor substrate 10, the aforesaid active layer 14 forms the structure of quantum well. Moreover, the thickness of the aforesaid active layer in the end face section is arranged to be smaller than that of the central part. |
| 公开日期 | 1992-08-14 |
| 申请日期 | 1990-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74656]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ANAYAMA CHIKASHI. Semiconductor laser device. JP1992225586A. 1992-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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