Manufacture of semiconductor laser
文献类型：专利
| 作者 | TAKEMOTO AKIRA; KAWAMA YOSHITATSU; NAMISAKI HIROBUMI; ISSHIKI KUNIHIKO |
| 发表日期 | 1989-10-23 |
| 专利号 | JP1989265585A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To control the width of an active layer stably by a method wherein ions are implanted to form a second conductivity type region using an edge of a second conductivity type region forming mask as a mask. CONSTITUTION:A high resistive buffer layer 2, an active layer 3 of an MQW structure, and a high resistive upper clad layer 4 are successively formed from top of a substrate A mask 5 used for the formation of a first conductivity type region is formed, and first conductivity type ions are implanted to form a first conductivity type region 6. A mask material 7a is formed on the whole face of a wafer. The mask 5 and the mask material 7a are removed and a mask 7b used for the formation of a second conductivity type region is formed. An ion beam is made to be obliuely incident on to form the second conductivity type region 8. The active layer 3 inside the regions 6 and 8 is disordered through a heat treatment so as to grow a clad region, an impurity non-injected region of the active layer 3 is made to be an active region, and electrodes 11 and 12 are built. By these processes, the width of an active region can be stably controlled. |
| 公开日期 | 1989-10-23 |
| 申请日期 | 1988-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74658]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKEMOTO AKIRA,KAWAMA YOSHITATSU,NAMISAKI HIROBUMI,et al. Manufacture of semiconductor laser. JP1989265585A. 1989-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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