Semiconductor laser
文献类型：专利
| 作者 | KURIHARA, HARUKI; SAGARA, MINORU; MATUMOTO, KENJI; TAMURA, HIDEO |
| 发表日期 | 1987-01-27 |
| 专利号 | US4639925 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semicondcutor laser comprises a semiconductor base structure provided with an etched channel, and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method and performing a laser function. The base structure includes a GaAs substrate of one conductivity type, a layer formed on the substrate for preventing deformation of the channel, and an oxidation-preventing layer formed on the channel deformation-preventing layer. A current-blocking layer consisting of GaAs of the opposite conductivity type may be formed between the GaAs substrate and the channel deformation-preventing layer. Further, another layer for preventing the channel deformation may be provided between the GaAs substrate and the current-blocking layer. In the invented semiconductor laser, the semiconductor layers are epitaxially grown sufficiently on the base structure, and the channel deformation can be sufficiently suppressed. |
| 公开日期 | 1987-01-27 |
| 申请日期 | 1984-04-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74666]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | KURIHARA, HARUKI,SAGARA, MINORU,MATUMOTO, KENJI,et al. Semiconductor laser. US4639925. 1987-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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