Semiconductor laser device
文献类型：专利
| 作者 | SHIMADA NAOHIRO |
| 发表日期 | 1989-02-14 |
| 专利号 | JP1989042191A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To achieve a high output and a long life by a method wherein a pair of end surfaces perpendicular to a stripe are made to be mirror surfaces forming a laser resonator and a distance between the end surfaces of the resonator is specified. CONSTITUTION:An n-type cladding layer 2, an undoped active layer 3, a p-type cladding layer 4 and a blocking layer 5 with a current constriction structure are successively built up from on top of an n-type GaAs substrate A stripe trench X is formed in the blocking layer 5 so as to make the bottom of the trench X reach the cladding layer 4. Then a p-type guide layer 6 is formed on the blocking layer 5 and over the whole surface of the trench X and, further, a p-type cladding layer 7 and a p-type GaAs contact layer 8 are built up. Then both end surfaces 12 and 12 which cross the stripe trench X are made to be mirror surfaces by cleaving and the distance Y between both the end surfaces is selected to be not less than 400mum. With this constitution, lateral mode characteristics and noise characteristics can be improved and optical output and life can be improved. |
| 公开日期 | 1989-02-14 |
| 申请日期 | 1987-08-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74689]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA NAOHIRO. Semiconductor laser device. JP1989042191A. 1989-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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