Semiconductor laser
文献类型：专利
| 作者 | OMURA ETSUJI |
| 发表日期 | 1991-04-03 |
| 专利号 | JP1991078284A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser of low threshold, where reactive currents are suppressed, by forming p-n junction such that it accords with the interface between a quantum well active layer and a semiconductor layer catching this quantum well active layer. CONSTITUTION:For a semiconductor laser, a p-AlGaAs lower clad layer 102, a quantum well layer 5 to become an active region consisting of each layer of an AlGaAs layers 103 and 105 and a GaAs layer 104 being a quantum well active layer, and an n-Al GaAs upper clad layer 106 are formed in order on an semiinsulating GaAs substrate 10 After growth, Si is selectively diffused so as to form an n-type impurity diffused region 108. Zn is diffused selectively so as to form a p-type impurity diffused region 107. The part where neither Si nor Zn is diffused becomes an active region 110, and p-n junction 3 is formed in accordance with the interface between the active layer 104 and the AlGaAs layer 105. By such arrangement, a semiconductor laser of low threshold where reactive currents are suppressed can be made. |
| 公开日期 | 1991-04-03 |
| 申请日期 | 1989-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74691]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OMURA ETSUJI. Semiconductor laser. JP1991078284A. 1991-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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