Semiconductor laser device
文献类型：专利
| 作者 | HOTTA HITOSHI |
| 发表日期 | 1992-01-13 |
| 专利号 | JP1992007885A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a lateral mode control semiconductor laser device whose astigmatic difference and light absorption are small, by burying a Zn doped AlInP layer in both sides of a thick clad layer which is composed of P-type AlGaInP and has a mesa stripe type. CONSTITUTION:On a P-type GaAs substrate 1, the following are deposited and formed in order; an N-type AlGaInP clad layer 2, a superlattice active layer 3 of GaInP or AlGaInP and a P-type AlGaInP clad layer 4. A mesa stripe is formed on the clad layer 4. A Zn doped AlInP layer 8 is deposited in the side region of the mesa stripe. In this case, the refractive index of AlGaInP is the smallest in the AlGaInP mixed crystal system, and a disordered state is generated in the superlattice active layer except the mesa stripe region when Zn is diffused from the Zn doped AlInP layer. Thereby the laser light oscillating in the active layer is confined in a region narrower than the stripe width, and stable lateral mode control wherein light absorption and astigmatic difference are small can be realized. |
| 公开日期 | 1992-01-13 |
| 申请日期 | 1990-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74693]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | HOTTA HITOSHI. Semiconductor laser device. JP1992007885A. 1992-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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