Semiconductor laser device
文献类型：专利
| 作者 | MITSUI SHIGERU; HATTORI AKIRA; YAGI TETSUYA |
| 发表日期 | 1990-05-14 |
| 专利号 | JP1990125488A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enhance a COD level higher under the conditions of a predetermined active layer thickness and end face reflectivity by not forming the protrusion ridge of a second clad layer near the end face of a resonator, and burying the part with a current block layer. CONSTITUTION:A first clad layer 2, an active layer 3, and a second clad layer 4' are sequentially formed on an N-type GaAs substrate Then, the layer 4' is so removed by photocomposing technique and etching technique as not to arrive at the active layer to form a forward mesa protrusion insular stripe type ridge near the end face. Then, an N-type GaAs current block layer is so formed as to bury the ridge on the layer 4' except the ridge, and a P-type GaAs contact layer is then formed. In a current noninjected region 10, excitation of minority carrier is increased by the absorption of the laser light, but this carrier density becomes 1/10 or less of the injected carrier density. Accordingly, the non light emission recombination of electron-hole through the surface level of the active layer is largely reduced as compared with the case of no region 10. |
| 公开日期 | 1990-05-14 |
| 申请日期 | 1989-07-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74696]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MITSUI SHIGERU,HATTORI AKIRA,YAGI TETSUYA. Semiconductor laser device. JP1990125488A. 1990-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。