Semiconductor laser device
文献类型：专利
| 作者 | TAKESHIMA MASUMI |
| 发表日期 | 1987-02-24 |
| 专利号 | JP1987042589A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To realize mode oscillation of a stable wavelength by a method wherein a stripe-shape current constriction region which has a plurality of wide parts and at least one narrow part and the wide parts are used as cavities and the narrow part is used as a coupling region between the cavities. CONSTITUTION:A Zn diffused layer 1 is formed into a sripe-shape whose wide parts are 10mum wide and 200mum and 300mum long and a narrow part is 3mum wide and 6mum long. By making an electrode 7 positive, positive holes are inject ed from the Zn diffused layer 1 into a GaAs activation layer 4. The positive holes are concentrated directly below the layer 1 by an n-type GaAs layer 2 and coupled with electrons from an electrode 8 to induce laser operation. The laser consists of two nearly independent cavities which are coupled by the narrow stripe pat. As the lengths of the cavities are different, the two cavities have different oscillation modes respectively and only the modes with wavelengths close to each other become common oscillation modes and a com plex cavity can be obtained and a stable mode oscillation can be realized. P-type and N-type Ga0.6Al0.4As cladding layers 3 and 5 confine injected positive holes and electrons and a laser light in the activation layer 4 to reduce the operating current. |
| 公开日期 | 1987-02-24 |
| 申请日期 | 1985-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74701]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKESHIMA MASUMI. Semiconductor laser device. JP1987042589A. 1987-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。