半導体レーザ素子およびその製造方法
文献类型：专利
| 作者 | 須山 尚宏; 近藤 雅文; 佐々木 和明; 高橋 向星; 細田 昌宏; 早川 利郎 |
| 发表日期 | 1998-03-27 |
| 专利号 | JP2763781B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子およびその製造方法 |
| 英文摘要 | PURPOSE:To facilitate the manufacture of a semiconductor laser of this design by a method wherein a part of a second clad layer on a light guide layer side is lower than its other part on an opposite side in doping concentration, and a stripe region protrudes upward from the second clad layer and both the sides of the stripe region are filled with a high resistive buried layer. CONSTITUTION:A part of a second clad layer 7 on a second light guide layer 6 side is lower than its other part on the other side in dopant concentration, a stripe region 12 is made to protrude upward from the second clad layer 7 forming a ridge structure, and both the sides of the stripe region are filled with a high resistive buried layer 9. As mentioned above, a transitional region in dopant concentration is provided between a region (a-b) and another region (b-c), where dopant concentration made to change. And, an etching interface is made coincident with a part (part b) where the p-clad layer 7 changes in dopant concentration or to be located slightly off the part toward a cap layer 8 side. By this setup, the manufacture of a semiconductor laser of this design can be facilitated. |
| 公开日期 | 1998-06-11 |
| 申请日期 | 1988-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74703]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 須山 尚宏,近藤 雅文,佐々木 和明,等. 半導体レーザ素子およびその製造方法. JP2763781B2. 1998-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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