Semiconductor laser
文献类型：专利
| 作者 | YAMAMOTO EIJI |
| 发表日期 | 1991-04-11 |
| 专利号 | JP1991087086A |
| 著作权人 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize operation by a method wherein a PNP structure or an NPN structure is constituted by laminating a PN structure on a semiconductor layer of one of a PN structure, light output is controlled by a current applied to a PN junction containing an active layer, and oscillating wavelength, light intensity and light phase of laser light are controlled by voltage applied to the other PN junction or injection current. CONSTITUTION:A variable wavelength laser diode is constituted of a first PN structure containing two semiconductor layers whose conductivity types are different from each other; an N-type layer composed of a base layer 6 and a guide layer 7, and a P-type layer composed of a guide layer 9 and a clad layer 10 are formed; an active layer 8 whose band gap energy is smaller than that of the above two layers are formed between the layers 7 and 9. All of the layers 7-10 are formed in the mesa type; the layer 10 is connected with an electrode 13 via a cap layer 11, and the side part and the foot region of the mesa structure are covered with an insulating layer 12. Characteristic point of the method in this constitution is that modulators 4 of small gap energy are arranged on both sides of the junction part of a second structure. |
| 公开日期 | 1991-04-11 |
| 申请日期 | 1990-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74710]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO EIJI. Semiconductor laser. JP1991087086A. 1991-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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