Semiconductor laser
文献类型：专利
| 作者 | MITO IKUO; KOBAYASHI ISAO; KUROIWA KOUICHI |
| 发表日期 | 1984-01-21 |
| 专利号 | JP1984011692A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the buried type semiconductor laser, which has sufficiently excellent element characteristics even when the laser is assembled through an upside-up system and can utilize the electrode polarity of conventional packages at it is, by forming buried type laser structure using a semi-insulating substrate. CONSTITUTION:A multilayer film wafer in which an N type InP clad layer 2 is grown on the Fe doped semi-insulating InP substrate 1 of a 001 face in the film thickness of approximately 10mum and an InGaAsP active layer 3 and a P type InP clad layer 4 are laminated by using a normal LPE method is prepared. Two grooves 30, 31 in parallel in the direction are formed by using an etching liquid of Br-methanol through a normal photolithography technique. A P type InP buried layer 7 is grown thickly in approximately 2mum in the film thickness of a flat section and laminated while coating the whole. Lastly, a P type InGaAsP cap layer is laminated, and a buried structure wafer is prepared. A section up to the N type InP clad layer 2 in parallel in the direction from the surface is etched by the etching liquid of Br-methanol while using an SiO2 film as a mask in order to form an N-side electrode, and an electrode fitting flat section 40 is formed. A P-side electrode 20 and the N-side electrode 21 are formed through the same evaporation process. |
| 公开日期 | 1984-01-21 |
| 申请日期 | 1982-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74716]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | MITO IKUO,KOBAYASHI ISAO,KUROIWA KOUICHI. Semiconductor laser. JP1984011692A. 1984-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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