Semiconductor light-emitting device
文献类型：专利
| 作者 | IMANAKA KOICHI |
| 发表日期 | 1989-10-20 |
| 专利号 | JP1989264275A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To effectively confine the light in the upward and downward directions by a method wherein two or more semiconductor thin layers which have a specific energy gap and a specific refractive index and whose composition is of two different kinds are eliminated in a position corresponding to the upper part and lower part of an active layer. CONSTITUTION:A p-type clad layer 5 is formed at the upper part and an n-type clad layer 3 is formed at the lower part, of an active layer 4 as a light-emitting layer. A p-type reflection film 10 which is constituted by alternately laminating two or more sets of semiconductor thin films 11 and 12 is formed at the upper part of the layer 5. An n-type reflection film 20 which is constituted by alternately laminating two or more sets of semiconductor thin films 21 and 22 is formed at the lower part of the layer 3. In this structure, an energy gap in the layer 4 is smaller than that in other layers; a refractive index in the layer 4 is larger than that in other layers. In addition, when a light-emitting wave-length in the layer 4 is designated as lambda, a thickness of the thin films 11, 12, 21 22 is set to a value obtained by multiplying lambda/4 by a retractive index of each layer. By this setup, it is possible to enhance the light-emitting efficiency and to make effective use of emitted light. |
| 公开日期 | 1989-10-20 |
| 申请日期 | 1988-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74723]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | IMANAKA KOICHI. Semiconductor light-emitting device. JP1989264275A. 1989-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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