Semiconductor laser
文献类型：专利
| 作者 | SHIMADA NAOHIRO; NAGASAKA HIROKO; HATAGOSHI GENICHI |
| 发表日期 | 1987-03-19 |
| 专利号 | JP1987062580A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To increase an output and reliability by forming a different type layer having different conductive type from a clad layer on a clad layer of opposite side to a substrate to an active layer except a stripe portion, and forming a coating layer of laminated structure of semiconductor crystal having two or more types of different lattice constants. CONSTITUTION:An N-type Ga0.6Al0.4As clad layer 22, an undoped Ga0.94Al0.06As active layer 23, a P-type Ga0.6Al0.4As clad layer 24, and an N-type GaAs current blocking layer (different type layer) 25 are sequentially grown on an N-type GaAs substrate crystal Then, a photoresist 31 is coated on the layer 25, a striped window is formed, with it as a mask the layer 24 is etched to the midway to form a striped groove 32, the resist 31 is removed, the surface is cleaned, then an Al0.48Ga0.26In0.26As layer 33 and a GaAs layer 34 are sequentially laminated, then P-type Ga0.6Al0.4As clad layer 27 and a P-type GaAs contact layer 28 are grown, a P-type and N-type electrodes 29, 30 are deposited, and then cleaved. |
| 公开日期 | 1987-03-19 |
| 申请日期 | 1985-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74731]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA NAOHIRO,NAGASAKA HIROKO,HATAGOSHI GENICHI. Semiconductor laser. JP1987062580A. 1987-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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