Semiconductor laser element
文献类型：专利
| 作者 | FUJIWARA KENZOU; NUNOSHITA MASAHIRO |
| 发表日期 | 1985-02-13 |
| 专利号 | JP1985028291A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To contrive to improve the crystal quality in an active layer by a method wherein a stepped multiplex hetero junction structure having a crystal lattice mismatching inductive strain is inserted in between a GaAs substrate and the active layer. CONSTITUTION:A stepped multiplex hetero junction layer 11 is provided in between a GaAs substrate 1 and an active layer 10. At this time, the thickness (h) of each AlxGa1-xAs mixed crystal epitaxial layer and the lattice mismatching degree in the layer 11 must sstisfy a condition that the thickness (h) is smaller than the critical value, at which a crystal lattice mismatching inductive transition is caused. In an AlxGa1-xAs system-short wavelength semiconductor laser element having the layer 11 with such a constitution, large lattice mismatchings existing between the substrate 1 and AlxGa1-xAs mixed crystal layers in an active layer 3 and clad layers 2 and 4 can be relaxed and dissolved in stages by the lattice mismatching inductive strain in each mixed crystal layer hetero junction set in a stair form, thereby enabling to prevent the generation and propagation of crystal defect such as a dislocation, etc. |
| 公开日期 | 1985-02-13 |
| 申请日期 | 1983-07-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74735]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | FUJIWARA KENZOU,NUNOSHITA MASAHIRO. Semiconductor laser element. JP1985028291A. 1985-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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