Semiconductor laser device
文献类型：专利
| 作者 | INOUE YASUAKI; YONEDA KOJI; YAMAGUCHI TAKAO |
| 发表日期 | 1990-06-07 |
| 专利号 | JP1990148786A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve reliability with less deterioration by forming a stripe groove to become a current path of a region having a depth of the thickness or more of a current blocking layer and a region having a shallower depth than the thickness of the layer, and specifying the length of the region having the shallower depth. CONSTITUTION:A current blocking layer 2 is piled on one main face of a sub strate 1, and a stripe groove 7 is formed on the surface of the layer 2. The depth of the groove 7 in an end face vicinity region A is shallower than the thickness of the layer 2, and the depth of the groove 7 in an inner region B is deeper than the thickness of a current blocking layer 29. Accordingly, the surface of the substrate 1 is exposed only on the region B of the groove 7, and a current flows in this part. The length l of the region A is set to a range indicated by a formula 15mum<=l<=L/5, where L is the length of a laser resonator. A P-type clad layer 3, an active layer 4, an n-type clad layer 5 and a cap layer 6 are sequentially piled on the layer 2 and the exposed substrate Thus, a high output oscillation can be performed while the deterioration of the characteristics is suppressed. |
| 公开日期 | 1990-06-07 |
| 申请日期 | 1988-11-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74766]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | INOUE YASUAKI,YONEDA KOJI,YAMAGUCHI TAKAO. Semiconductor laser device. JP1990148786A. 1990-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。