半導体レ-ザの製造方法
文献类型：专利
| 作者 | 花光 幸和; 土屋 富志夫; 山口 茂実; 浅井 昭彦; 牧田 克男 |
| 发表日期 | 1996-01-31 |
| 专利号 | JP1996010780B2 |
| 著作权人 | アンリツ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザの製造方法 |
| 英文摘要 | PURPOSE:To obtain a laser whose active layer is narrow, whose oscillation mode is stable and whose threshold electric current is low by a method wherein an inverted-mesa-shaped part is formed by using a first etching solution and, in succession, a vertical-shaped part and a forward-mesa-shaped part are formed by using a second etching solution. CONSTITUTION:A p-type InP clad layer 12, an InGaAsP active layer 13 and an n-type InP clad layer 14 are formed on a p-type InP substrate 1 A stripe-shaped SiO2 film 23 to be used for a mask is formed on the layer 14; an etching process is executed up to the clad layer 12 over the active layer 13 by using a solution of Br2-CH3OH as a first etching solution so as to form an inverted-mesa-shaped part 20; then, another etching process is executed up to an intermediary part of the substrate 11 by using another solution of hydrochloric acid as a second etching solution so as to form a vertical-shaped part 21 and a forward-mesa- shaped part 22. Then, a p-type buried layer 15, an n-type buried layer 16 and a p-type buried layer 17 are formed in succession at the circumference of these mesa stripes. If the etching process is executed in such a way that the active layer 13 is situated near the part connecting the inverted-mesa-shaped part 20 to the vertical-shaped part 12 the width W of the active layer can be narrowed. By this setup, it is possible to stabilize an oscillation mode of a laser beam and to lower a threshold electric current while a high output is maintained. |
| 公开日期 | 1996-01-31 |
| 申请日期 | 1987-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74780]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | アンリツ株式会社 |
| 推荐引用方式 GB/T 7714 | 花光 幸和,土屋 富志夫,山口 茂実,等. 半導体レ-ザの製造方法. JP1996010780B2. 1996-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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