面発光型半導体レーザ
文献类型：专利
| 作者 | 森 克己; 浅賀 達也; 岩野 英明 |
| 发表日期 | 2003-02-07 |
| 专利号 | JP3395194B2 |
| 著作权人 | セイコーエプソン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光型半導体レーザ |
| 英文摘要 | PURPOSE:To prevent leakage of an injecting current to a buried layer and to improve a current constriction by burying a periphery of a columnar semiconductor layer for constituting a resonator with II-VI compound semiconductor epitaxial layer having a high resistance. CONSTITUTION:An n-type GaAs buffer 103 is formed on an n-type GaAs substrate 102, and a distributed reflection type multilayer film mirror 104 made of an n-type Al0.7Ga0.3As layer and an n-type Al0.1Ga0.9As layer is formed. An n-type Al0.4Gs0.6As clad layer 105, a p-type GaAs active layer 106, a p-type Al0.4Ga0.6As clad layer 107, and a p-type Al0.1Ga0.9As contact layer 108 are sequentially epitaxially grown. After an SiO2 layer 112 is formed, the layer 107 is etched to the midway except a columnar light emitting unit covered with a hard baking resist 113. After the resist 113 is removed, it is lattice- matched to GaAs, and a ZnS0.06Se0.94 layer 109 having a resistance of 1GOMEGA or more is buried and grown. Further, an SiO2/alpha-Si dielectric multilayer film 111 is formed on the surface. |
| 公开日期 | 2003-04-07 |
| 申请日期 | 1991-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74783]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | 森 克己,浅賀 達也,岩野 英明. 面発光型半導体レーザ. JP3395194B2. 2003-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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