Semiconductor laser
文献类型：专利
| 作者 | UNNO TSUNEHIRO; WAJIMA MINEO; TATE HISAFUMI; TOYOSHIMA TOSHIYA; OOKAWA YOSHINORI |
| 发表日期 | 1989-07-05 |
| 专利号 | JP1989170083A |
| 著作权人 | HITACHI CABLE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve a semiconductor laser in property and manufacturing yield by a method wherein an epitaxial layer which is provided with a flat face and high in carrier concentration is used as a current constriction layer. CONSTITUTION:A semiconductor laser is composed of a P-type substrate 7 and an epitaxial layer highly doped with Sn used as a current constriction layer 6. The epitaxial layer using Sn as a dopant is hard to degrade the evenness of its superficial layer even if a large amount of dopant is used. Therefore, when an epitaxial layer highly doped with Sn is used as an n-type current constriction layer, the surface of the epitaxial layer is made flat notwithstanding that the layer is high in carrier concentration. By these processes, a semiconductor laser is decreased not only in a threshold current but also in the variability of property and improved in a manufacturing yield. |
| 公开日期 | 1989-07-05 |
| 申请日期 | 1987-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74784]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI CABLE |
| 推荐引用方式 GB/T 7714 | UNNO TSUNEHIRO,WAJIMA MINEO,TATE HISAFUMI,et al. Semiconductor laser. JP1989170083A. 1989-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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