Semiconductor light emitting device
文献类型：专利
| 作者 | MOGI NAOTO; HATAGOSHI GENICHI |
| 发表日期 | 1988-10-03 |
| 专利号 | JP1988236391A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To decrease an interior stress at a crystal end face by a method wherein a contact layer is rendered less than 1/4 times as thick as an action layer. CONSTITUTION:An n-Ca0.6Al0.4As layer 21 5mum, a Ga0.92Al0.08As layer 22 0.06 mum, a p-Ca0.6Al0.4As layer 23 0.5mum, and an n-Ca0.6Al0.4As layer 24 1mum in thickness are successively grown, thereafter a current block layer 24 and the p-type clad layer 23 are partially subjected to etching to be stripe-like for the formation of a stripe-like opening. Next, a p-Ca0.6Al0.4As layer 25 0.2 mum, a-Ca0.6Al0.4As layer 26 5mum, and a n-GaAs layer 50 5mum in thickness are grown, thereafter a substrate 10 and the contact layer 50 are subjected to etching to be 100mum and 1mum respectively in thickness. Thereafter, a Ti/Pt/Au layer 41 is evaporated on the contact 50 and an AuGe/Au layer 42 is also evaporated under 5 the substrate 10. By these processes, a contact layer is rendered 1/4 times as thick as an action layer, whereby an interior stress generated at a crystal end face can be reduced. |
| 公开日期 | 1988-10-03 |
| 申请日期 | 1987-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74786]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,HATAGOSHI GENICHI. Semiconductor light emitting device. JP1988236391A. 1988-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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