Semiconductor laser device
文献类型：专利
| 作者 | OTOSHI SO; KAYANE NAOKI |
| 发表日期 | 1991-12-13 |
| 专利号 | JP1991283479A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device in which laser rays can be controlled in a polarizing direction by a method wherein the axes of fine wires are set parallel to a substrate in a vertical resonator type surface emitting laser, and an active region is formed in such a structure that a longest side of a quantum box as a rectangular parallelepiped is set parallel to the substrate. CONSTITUTION:Provided that an optical axis extends in a y direction, a quantum fine wire 3 (sides a, b, and c are set to satisfy a formula, a, b< |
| 公开日期 | 1991-12-13 |
| 申请日期 | 1990-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74815]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OTOSHI SO,KAYANE NAOKI. Semiconductor laser device. JP1991283479A. 1991-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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