Semiconductor laser device
文献类型：专利
| 作者 | MOGI NAOTO; WATANABE YUKIO; SHIMADA NAOHIRO; OKAJIMA MASASUE |
| 发表日期 | 1985-07-20 |
| 专利号 | JP1985137083A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the loss of conductive layers of different types due to osmosis of a light conducted to the active layer by increasing the effective refractive index immediately under a stripe. CONSTITUTION:An n type Ga0.65Al0.35As clad layer 12, a Ga0.92Al0.08As active layer 13, a p type Ga0.65Al0.35As clad layer 14, and an n type GaAs current blocking layer 15 are grown on an n type GaAs substrate 1 Then, a resist 21 is coated on the layer 15, the layers 15, 14 are etched to form a groove 22. Then, a coating layer 16, a contacting layer 17, and electrode layers 17, 18 are sequentially formed. Since the layer 16 having the refractive index larger than the clad layer is buried in the stripe groove, the loss due to the loss guide can be eliminated. |
| 公开日期 | 1985-07-20 |
| 申请日期 | 1983-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74823]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,WATANABE YUKIO,SHIMADA NAOHIRO,et al. Semiconductor laser device. JP1985137083A. 1985-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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