Semiconductor light-emitting device
文献类型：专利
| 作者 | YOSHIDA TOMOAKI; SAITO TETSUO; SATO SHIRO; INABA FUMIO; ITO HIROMASA; AZUMI JUNICHI |
| 发表日期 | 1990-03-26 |
| 专利号 | JP1990084785A |
| 著作权人 | INABA FUMIO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain a semiconductor light-emitting element and a semiconductor laser having excellent current injection efficiency and a high radiant power output by forming a current block layer substantially in parallel with the main surface on a substrate and a recessed section shaped substantially vertically to the main surface on the substrate and forming a P-N junction mainly onto the side face of the recessed section. CONSTITUTION:A semiconductor substrate 101, a light-emitting layer, which is shaped to the main surface of the semiconductor substrate 101, has a P-N junction 108 and emits light in the direction substantially vertical to said main surface in the vicinity of the P-N junction 108, a current block layer 130, in which a semiconductor light-emitting device with electrodes 106, 107 injecting currents to the light-emitting layer is formed substantially in parallel with said main surface on the substrate 101, and a recessed section 140 formed substantially vertically to said main surface to a laminating section on the substrate 101 are provided, and the P-N junction 108 is formed along the side face of the recessed section 140. The cylindrical recessed section 140 is shaped to an N-type GaAs epitaxial layer 102, and Zn, etc., are diffused to the internal side face of the recessed section 140 and a P-type diffusion region 131 is formed. |
| 公开日期 | 1990-03-26 |
| 申请日期 | 1988-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74827]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INABA FUMIO |
| 推荐引用方式 GB/T 7714 | YOSHIDA TOMOAKI,SAITO TETSUO,SATO SHIRO,et al. Semiconductor light-emitting device. JP1990084785A. 1990-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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