Optical integrated circuit
文献类型：专利
| 作者 | SAKANO SHINJI; INOUE HIROAKI; NAKAMURA HITOSHI; KATSUYAMA TOSHIO; MATSUMURA HIROYOSHI |
| 发表日期 | 1987-06-19 |
| 专利号 | JP1987136886A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated circuit |
| 英文摘要 | PURPOSE:To eliminate an emitting end surface and introduce an emitted beam from a light emitting device into an external modulator efficiently by a method wherein the light emitting device made of compound semiconductor and a light modulating device made of compound semiconductor of the same crystal system as a compound semiconductor crystal substrate are provided on the compound semiconductor crystal substrate in a monolithic structure and coupled with each other through an optical waveguide. CONSTITUTION:A diffraction grating 1-2 is engraved on an InP substrate 3 and an active layer 1-1 and a guide layer 1-3 made of InGaAsP and an InP layer 1-4 are formed on the diffraction grating 1-2 by crystal growth. After a multiplayer crystal layer for a laser is removed, multilayer crystal for an optical switch, in which an optical waveguide 2-1 is made of InGaAsP, is made to grow. After regions except a DFB laser and the optical waveguide of the optical switch part are simultaneously etched, InP crystal, which has a lower refractive index than InGaAsP, is made to grow on the regions other than the waveguide. Further, the reflective region 2 of the optical switch is doped with an impurity (for instance Zn) to concentrate an injected current to the region 2. As an emitting end surface is eliminated, the emitter beam from the DFB laser can be coupled with the optical waveguide 2-1 of the optical switch efficiently. |
| 公开日期 | 1987-06-19 |
| 申请日期 | 1985-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74829]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SAKANO SHINJI,INOUE HIROAKI,NAKAMURA HITOSHI,et al. Optical integrated circuit. JP1987136886A. 1987-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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